Memory Effect in the Photoinduced Femtosecond Rotation of Magnetization in the Ferromagnetic Semiconductor GaMnAs
J. Wang,(1) I. Cotoros,(1) X. Liu,(2) J. Chovan,(3) J. K. Furdyna,(2), I. E. Perakis,(3), D. S. Chemla (1) ((1) Materials Sciences Division, E.O., Lawrence Berkeley National Laboratory, Department of Physics, University, of California at Berkeley (2) Department of Physics
TL;DR
This paper demonstrates femtosecond-scale control of magnetization in GaMnAs, revealing a four-state magnetic memory and distinct non-equilibrium and thermal regimes in ultrafast photoinduced magnetization dynamics.
Contribution
It uncovers the femtosecond response and memory effect in magnetization rotation in GaMnAs, highlighting the transition between non-equilibrium and thermal regimes.
Findings
Detection of four-state magnetic memory at femtosecond scale
Identification of two distinct temporal regimes in magnetization dynamics
Observation of a discontinuity indicating a regime transition
Abstract
We report a femtosecond response in photoinduced magnetization rotation in the ferromagnetic semiconductor GaMnAs, which allows for detection of a four-state magnetic memory at the femtosecond time scale. The temporal profile of this cooperative magnetization rotation exhibits a discontinuity that reveals two distinct temporal regimes, marked by the transition from a highly non-equilibrium, carrier-mediated regime within the first 200 fs, to a thermal, lattice-heating picosecond regime.
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Taxonomy
TopicsAdvanced Fiber Laser Technologies · Neurobiology and Insect Physiology Research · Photonic and Optical Devices