Electronic Structures of Fe$_{3-x}V$_x$Si Probed by Photoemission Spectroscopy

TL;DR

This study investigates the electronic structures of Fe$_{3-x}V$_x$Si compounds using photoemission spectroscopy, revealing how chemical potential and density of states evolve with vanadium doping.

Contribution

It provides new insights into the electronic structure changes and pseudo gap formation in Fe$_{3-x}V$_x$Si across different V concentrations.

Findings

Chemical potential shifts to higher energy with increasing V content.

Density of states at Fermi edge involves V 3d and Fe 3d states.

Pseudo gap formation occurs at higher V concentrations.

Abstract

The electronic structures of the Heusler type compounds Fe$_{3-x}V$_x$Si in the concentration range between x = 0 and x = 1 have been probed by photoemission spectroscopy (PES). The observed shift of Si 2p core- level and the main valence band structres indicate a chemical potential shift to higher energy with increasing x. It is also clarified that the density of state at Fermi edge is owing to the collaboration of V 3d and Fe 3d derived states. Besides the decrease of the spectral intensity near Fermi edge with increasing x suggests the formation of pseudo gap at large x.