Interface-driven magnetocapacitance in a broad range of materials

TL;DR

This paper demonstrates that interfaces with localized charges in various materials can significantly enhance magnetocapacitance, with effects tunable by frequency and temperature, opening new avenues for multiferroic applications.

Contribution

It reveals that interface engineering with localized charges can induce strong magnetocapacitance across diverse materials, a novel approach in the field.

Findings

Magnetocapacitance exceeds a few percent at 90kOe magnetic field.

Tuning dielectric relaxation time controls the magnetocapacitance effect.

Interfaces such as diodes, grain boundaries, and domain walls are effective in this coupling.

Abstract

Triggered by the revival of multiferroic materials, a lot of effort is presently undergoing as to find a coupling between a capacitance and a magnetic field. We show in this report that interfaces are the right way of increasing such a coupling provided free charges are localized on these two-dimensional defects. Starting from commercial diodes at room temperature and going to grain boundaries in giant permittivity materials and to ferroelectric domain walls, a clear magnetocapacitance is reported which is all the time more than a few percent for a magnetic field of 90kOe. The only tuning parameter for such strong coupling to arise is the dielectric relaxation time which is reached on tuning the operating frequency and the temperature in many different materials.