Exciton and hole spin dynamics in ZnO
D. Lagarde, A. Balocchi, P. Renucci, H. Carr\`ere, F. Zhao, T. Amand,, X. Marie, Z.X. Mei, X.L. Du, Q.K. Xue
TL;DR
This study investigates spin dynamics in ZnO using time-resolved optical methods, revealing localized hole spin relaxation times and the influence of exciton ionization on polarization dynamics.
Contribution
First measurement of localized hole spin relaxation time in ZnO, and analysis of exciton ionization effects on spin polarization dynamics.
Findings
Hole spin relaxation time ~350 ps at 1.7 K
Polarization dynamics depend on exciton ionization
Fast free exciton spin relaxation observed
Abstract
The carrier spin dynamics in ZnO is investigated by time-resolved optical orientation experiments. We evidence a clear circular polarization of the donor-bound exciton luminescence in both ZnO epilayer and non-intentionally doped bulk ZnO. This allows us to measure the localized hole spin relaxation time. We find 350 ps at T=1.7 K in the ZnO epilayer. The strong energy and temperature dependences of the photoluminescence polarization dynamics are well explained by the fast free exciton spin relaxation time and the ionization of bound excitons.
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Taxonomy
TopicsZnO doping and properties