Switching of the Mott transition based on the hole-driven MIT theory

TL;DR

This paper explores how infrared light irradiation and electric fields can induce a Mott transition in VO_2, supporting the hole-driven MIT theory that emphasizes correlation effects over structural Peierls transition.

Contribution

It provides experimental evidence for the hole-driven Mott transition mechanism in VO_2, highlighting the role of hole doping in inducing abrupt MIT.

Findings

Infrared light and electric field can switch the MIT in VO_2.

The switching mechanism aligns with the hole-driven Mott transition theory.

The transition is explained by correlation effects, not Peierls distortion.

Abstract

Switching voltage of first-order metal-insulator transition (MIT) in VO_2, an inhomogeneous strongly correlated system, is changed by irradiating an infrared light with wavelength, 1.5 micrometer, and applying the electric field (photo-induced switching). This was predicted in the hole-driven MIT theory in which hole doping of a low concentration below 0.01% into conduction band (Fermi surface) induces the abrupt MIT as correlation effect. The switching is explained by the Mott transition not the Peierls transition.