Device Model for Graphene Nanoribbon Phototransistor

TL;DR

This paper presents an analytical model for a graphene nanoribbon phototransistor, detailing its current response to incident radiation and demonstrating its potential as an effective infrared and terahertz photodetector.

Contribution

The paper introduces a new analytical device model for GNR-PTs, linking current response to radiation properties and evaluating detector responsivity.

Findings

GNR-PTs can effectively detect infrared and terahertz radiation.

The model provides explicit relationships for source-drain current based on radiation parameters.

GNR-PTs show promising potential as photodetectors in specific spectral ranges.

Abstract

An analytical device model for a graphene nanoribbon phototransistor (GNR-PT) is presented. GNR-PT is based on an array of graphene nanoribbons with the side source and drain contacts, which is sandwiched between the highly conducting substrate and the top gate. Using the developed model, we derive the explicit analytical relationships for the source-drain current as a function of the intensity and frequency of the incident radiation and find the detector responsivity. It is shown that GNR-PTs can be rather effective photodetectors in infrared and terahertz ranges of spectrum.