Existence of Large Room Temperature Ferroelectricity in Chemical Solution Grown PbTiO3 Buffered (BiFeO3)1-x-(PbTiO3)x Films on Pt/Si Substrates

TL;DR

This study demonstrates large room temperature ferroelectricity in chemically solution-grown PbTiO3 buffered BiFeO3-PbTiO3 films on Pt/Si, showing significant polarization and dielectric constants near the morphotropic phase boundary.

Contribution

It reports the synthesis and characterization of ferroelectric thin films with enhanced properties using chemical solution deposition and buffer layers, highlighting their potential for device applications.

Findings

Large remnant polarization (~75 μC/cm^2) at x=0.3

High dielectric constant (~2400) at 1 kHz for x=0.3

Buffered films outperform unbuffered films in ferroelectric properties

Abstract

Here, we report the existence of large remnant polarization and dielectric constant in PbTiO3 buffered polycrystalline (BiFeO_3)_{1-x} (PbTiO_3)_x thin films of composition x = 0.25, 0.30 and 0.35 around the morphotropic phase boundary. The films were deposited by chemical solution deposition on platinized silicon substrates. Films reveal a perovskite structure with a tendency to retain rhombohedral structure even at higher PbTiO_3 content than that reported in bulk. We observe very large remnant polarization, ~75 microC/cm^2, and high dielectric constant, ~2400 at 1 kHz for x = 0.3, which lies in the MPB composition range. The unbuffered films show less than 1 microC/cm^2 for the same composition.