Quantum ratchet effects induced by terahertz radiation in GaN-based two-dimensional structures
W. Weber, L. E.Golub, S. N. Danilov, J. Karch, C. Reitmaier, B., Wittmann, V. V. Bel'kov, E. L. Ivchenko, Z. D. Kvon, N. Q. Vinh, A. F. G. van, der Meer, B. Murdin, and S. D. Ganichev
TL;DR
This paper investigates how terahertz radiation induces quantum ratchet effects in GaN/AlGaN two-dimensional structures, revealing photocurrents caused by the lack of inversion symmetry, with both experimental and theoretical insights.
Contribution
It demonstrates the presence of quantum ratchet effects in GaN-based heterostructures excited by terahertz radiation, combining experimental observations with theoretical analysis.
Findings
Photogalvanic effects observed in GaN/AlGaN structures.
Photocurrents linked to lack of inversion symmetry.
Structures act as linear quantum ratchets.
Abstract
Photogalvanic effects are observed and investigated in wurtzite (0001)-oriented GaN/AlGaN low-dimensional structures excited by terahertz radiation. The structures are shown to represent linear quantum ratchets. Experimental and theoretical analysis exhibits that the observed photocurrents are related to the lack of an inversion center in the GaN-based heterojunctions.
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