Electron transport in a slot-gate Si MOSFET

TL;DR

This study investigates electron transport in a silicon MOSFET with a slot-gate, revealing how varying electron densities affect longitudinal resistance and spin-related Landau level occupancy in the quantum Hall regime.

Contribution

It introduces a novel experimental setup with a slot-gate to independently control electron densities, enabling detailed analysis of resistance differences and spin effects in the quantum Hall regime.

Findings

Longitudinal resistance differences depend on gate voltage gradients.

Resistances increase when electrons on opposite sides occupy different spin Landau levels.

Hall voltage differences influence longitudinal measurements depending on gate voltages.

Abstract

The transversal and longitudinal resistance in the quantum Hall effect regime was measured in a Si MOSFET sample in which a slot-gate allows one to vary the electron density and filling factor in different parts of the sample. In case of unequal gate voltages, the longitudinal resistances on the opposite sides of the sample differ from each other because the originated Hall voltage difference is added to the longitudinal voltage only on one side depending on the gradient of the gate voltages and the direction of the external magnetic field. After subtracting the Hall voltage difference, the increase in longitudinal resistance is observed when electrons on the opposite sides of the slot occupy Landau levels with different spin orientations.