Hall effect measurements on YbRh2Si2 and relatives in the light of electronic structure calculations

TL;DR

This study combines experimental Hall effect measurements with electronic structure calculations to understand the behavior of YbRh2Si2 and related compounds, revealing how slight compositional changes affect electronic properties.

Contribution

It provides a detailed analysis of the Hall effect in YbRh2Si2 and relatives using band-structure calculations, highlighting the impact of minor compositional variations on electronic behavior.

Findings

Two dominant bands identified in all compounds.

Temperature dependence explained by two hole-like bands in LuRh2Si2.

Sample dependence of Hall coefficient linked to scattering rate variations.

Abstract

We report experimental and theoretical investigations of the Hall effect in YbRh2Si2 and its reference compounds LuRh2Si2 and YbIr2Si2. Based on band-structure calculations we identify two bands dominating the Hall coefficient in all these compounds. For the case of LuRh2Si2 - the non-magnetic reference compound of YbRh2Si2 - the temperature dependence of the Hall coefficient is described quantitatively to arise from two hole-like bands. For YbIr2Si2 and YbRh2Si2, renormalized band calculations yield two bands of opposite character. In YbRh2Si2 these two bands almost compensate each other. We present strong indications that the sample dependences of the low-temperature Hall coefficient observed for YbRh2Si2 arise from slight variations of the relative scattering rates of the two bands. Minute changes of the composition appear to be the origin.