1/f noise near the free surface of a semiconductor

TL;DR

This study investigates 1/f noise in the depleted region of semiconductors, linking it to surface energy states and band-bending, and demonstrates how reducing band-bending can lower noise levels.

Contribution

It provides a quantitative model connecting 1/f noise to surface states and band-bending in n-type semiconductors, offering insights for noise reduction.

Findings

1/f noise correlates with surface energy states and band-bending.

Reducing band-bending decreases 1/f noise.

Quantitative description of noise reduction provided.

Abstract

This paper describes the so-called 1/f noise generated within the depleted region below a free semiconducting surface. It was shown that there is a link between the 1/f noise, which can be controlled by the band-bending, and the very narrow energy states (E<<kT) located on the top surface and vanishing into the bulk region. Also, it was shown that the noise can be lowered when the band-bending is reduced. A quantitative description of this reduction was provided. This study considered the n-type semiconductor.