Percolation Model Explaining Both Unipolar Memory and Threshold Resistance Switchings in NiO Film

TL;DR

This paper presents a bond percolation model that explains both unipolar memory and threshold resistance switching in NiO films, linking temperature-dependent filament formation and rupture to observed electrical behaviors.

Contribution

It introduces a unified percolation-based framework that accounts for both types of resistance switching phenomena in NiO, emphasizing the role of Joule heating and thermal effects.

Findings

Memory RS occurs at low temperature

Threshold RS occurs at high temperature

Both RS types are explained by a single percolation model

Abstract

We observed two types of unipolar resistance switching (RS) in NiO film: memory RS at low temperature and threshold RS at high temperature. We explain these phenomena using a bond percolation model that describes the forming and rupturing of conducting filaments. Assuming Joule heating and thermal dissipation processes in the bonds, we explain how both RS types could occur and be controlled by temperature. We show that these unipolar RS are closely related and can be explained by a simple unified percolation picture.