Diffusion and desorption of SiH3 on hydrogenated H:Si(100)-(2x1) from first principles

TL;DR

This study uses first-principles calculations to analyze the diffusion and desorption mechanisms of SiH3 radicals on hydrogenated silicon surfaces, revealing low energy barriers and limited diffusion before desorption at typical growth temperatures.

Contribution

It provides detailed first-principles insights into the diffusion pathways, energy barriers, and desorption mechanisms of SiH3 on H:Si(100)-(2x1), informing silicon growth processes.

Findings

Diffusion barriers as low as 0.2 eV for SiH3 migration.

Trap states with escape barriers of 0.7 eV identified.

Limited diffusion distance before desorption at 300-1000 K.

Abstract

We have studied diffusion pathways of a silyl radical adsorbed on the hydrogenated Si (100)-(2x1) surface by density-functional theory. The process is of interest for the growth of crystalline silicon by plasma-enhanced chemical vapor deposition. Preliminary searches for migration mechanisms have been performed using metadynamics simulations. Local minima and transition states have been further refined by using the nudged-elastic-band method. Barriers for diffusion from plausible adsorption sites as low as 0.2 eV have been found, but trap states have also been spotted, leading to a more stable configuration, with escape barriers of 0.7 eV. Diffusion among weakly bound physisorbed states is also possible with very low activation barriers (<50 meV). However, desorption mechanisms (either as SiH3 or as SiH4) from physisorbed or more strongly bound adsorption configurations turn out to have activation energies similar to diffusion barriers. Kinetic Monte Carlo simulations based on ab initio activation energies show that the silyl radical diffuses at most by a few lattice spacing before desorbing at temperatures in the range 300-1000 K.