A solution in 3 dimensions for current in a semiconductor under high level injection from a point contact

TL;DR

This paper presents a three-dimensional solution for analyzing current in semiconductors under high-level injection from a point contact, fitting theoretical models to experimental breakdown data.

Contribution

It introduces a 3D analytical approach for high-level injection in semiconductors, matching experimental current-voltage characteristics from ultrathin dielectric breakdown.

Findings

Minority carrier injection level was approximately 70%.

The model accurately fit the measured breakdown characteristics.

The approach advances understanding of high-level injection effects.

Abstract

The standard equations for semiconductor device analysis were solved by specifying the electron and hole current injected at a small contact, assuming high-level injection. Calculated current-voltage characteristics were fit to measurements of a single point breakdown in an ultrathin dielectric. It was found that the minority carrier injection level was about 70%.