Boundary-mediated electron-electron interactions in quantum point contacts
Vincent Thomas Francois Renard (NTT, BRL, LCMI), O. A. Tkachenko, (LCMI, Institute of semiconductor Physics), V.A. Tkachenko (Institute of, semiconductor Physics), T. Ota (NTT, BRL), N. Kumada (NTT, BRL), J.-C. Portal, (LCMI), Y. Hirayama (NTT, BRL, SORST-JST, Tohoku University)
TL;DR
This paper investigates how boundary-mediated electron-electron interactions influence conductance and magnetoresistance in quantum point contacts, revealing temperature-dependent behaviors explained by a new interaction model.
Contribution
It introduces a model for boundary-mediated electron-electron interactions in quantum point contacts, supported by numerical simulations and explaining observed conductance and magnetoresistance phenomena.
Findings
Conductance increases with temperature for G > 2e^2/h
Positive magnetoresistance appears at high temperatures
Model qualitatively matches experimental observations
Abstract
An unusual increase of the conductance with temperature is observed in clean quantum point contacts for conductances larger than 2e^2/h. At the same time a positive magnetoresistance arises at high temperatures. A model accounting for electron-electron interactions mediated by bound- aries (scattering on Friedel oscillations) qualitatively describes the observation. It is supported by numerical simulation at zero magnetic field.
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