Room Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors

TL;DR

This study demonstrates that sub-10nm graphene nanoribbon FETs are all semiconducting with high current ratios and mobility, offering a promising alternative to carbon nanotube FETs for nanoscale electronics.

Contribution

First systematic analysis showing all sub-10nm GNRs are semiconducting with high performance metrics, highlighting their potential for nanoelectronic applications.

Findings

Ion/Ioff ratio up to 10^6

On-state current density ~2000 μA/μm

Carrier mobility ~200 cm²/Vs

Abstract

Sub-10nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied systematically. All sub-10nm GNRs afforded semiconducting FETs without exception, with Ion/Ioff ratio up to 10^6 and on-state current density as high as ~2000uA/um. We estimated carrier mobility ~200cm2/Vs and scattering mean free path ~10nm in sub-10nm GNRs. Scattering mechanisms by edges, acoustic phonon and defects are discussed. The sub-10nm GNRFETs are comparable to small diameter (d<=~1.2nm) carbon nanotube FETs with Pd contacts in on-state current density and Ion/Ioff ratio, but have the advantage of producing all-semiconducting devices.