Nonvolatile Static Random Access Memory (NV-SRAM) Using Magnetic Tunnel Junctions with Current-Induced Magnetization Switching Architecture

TL;DR

This paper introduces a novel NV-SRAM cell utilizing magnetic tunnel junctions with current-induced magnetization switching, enabling nonvolatile storage with low power dissipation, suitable for future power-efficient logic systems.

Contribution

It presents a new NV-SRAM design using MTJs with CIMS architecture, allowing fully electrical store and restore operations without magnetic fields.

Findings

Computational analysis confirms feasibility of the proposed NV-SRAM.

The design enables nonvolatile data retention with low static power.

Potential application in power-gating logic systems.

Abstract

We propose and computationally analyze a nonvolatile static random access memory (NV-SRAM) cell using magnetic tunnel junctions (MTJs) with magnetic-field-free current-induced magnetization switching (CIMS) architecture. A pair of MTJs connected to the storage nodes of a standard SRAM cell with CIMS architecture enables fully electrical store and restore operations for nonvolatile logic information. The proposed NV-SRAM is expected to be a key component of next-generation power-gating logic systems with extremely low static-power dissipation.