Hole Localization in One-Dimensional Doped Anderson-Hubbard Model

TL;DR

This paper investigates how disorder influences hole localization in a one-dimensional doped Anderson-Hubbard model, revealing disorder-induced Mott regions that expand with increasing disorder, contrasting typical expectations.

Contribution

It uncovers a novel disorder-assisted Mott phase formation in the doped Anderson-Hubbard model using DMRG simulations, suggesting experimental observability in atomic Fermi gases.

Findings

Disorder creates locally Mott regions in the doped system.

Mott regions expand with increasing disorder strength.

Clean system exhibits fluid-like behavior in large U/t regime.

Abstract

We study the interplay of disorder and correlation in the one-dimensional hole-doped Hubbard-model with disorder (Anderson-Hubbard model) by using the density-matrix renormalization group method. Concentrating on the doped-hole density profile, we find in a large $U/t$ regime that the clean system exhibits a simple fluid-like behavior whereas finite disorders create locally Mott regions which expand their area with increasing the disorder strength contrary to the ordinary sense. We propose that such an anomalous Mott phase formation assisted by disorder is observable in atomic Fermi gases by setup of the box shape trap.