Pseudogap-driven Hall effect sign reversal
D. V. Evtushinsky, S. V. Borisenko, A. A. Kordyuk, V. B. Zabolotnyy,, D. S. Inosov, B. Buechner, H. Berger, L. Patthey, and R. Follath

TL;DR
This paper models the Hall effect in layered materials, showing how pseudogap formation causes a sign reversal in the Hall coefficient, aligning well with experimental data.
Contribution
It introduces a theoretical approach incorporating pseudogap effects to explain the Hall coefficient sign change without adjustable parameters.
Findings
Reproduces the temperature-dependent Hall coefficient sign change
Aligns theoretical results with experimental observations
Highlights pseudogap's role in electronic transport phenomena
Abstract
We present a calculation of the Hall coefficient in 2H-TaSe2 and 2H-Cu0.2NbS2 relied on the photoemission data and compare the results to transport observations. The approach, based on the solution of the semiclassical Boltzmann equation in the isotropic tau-approximation yields high-temperature Hall coefficient consistent with the one measured directly. Taking into account the opening of the pseudogap and redistribution of the spectral weight, recently observed in angle resolved photoemission spectra of 2H-TaSe2, allows us to reproduce the temperature dependence of the Hall coefficient including prominent sign change with no adjustable parameters.
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Taxonomy
TopicsHeusler alloys: electronic and magnetic properties · Advanced Chemical Physics Studies · Chalcogenide Semiconductor Thin Films
