Non-volatile resistive switching in dielectric superconductor YBCO

TL;DR

This paper demonstrates reversible, nonvolatile resistive switching between superconducting and insulating states at Au/YBCO interfaces, driven by ion migration, with implications for superconducting memory devices.

Contribution

It reveals a novel resistive switching mechanism in YBCO involving ion migration, enabling reversible control of superconducting states at the interface.

Findings

Resistive switching is polarity-dependent and reversible.

Switching involves oxygen or metallic ion migration.

Bulk effects are significant, not just interface phenomena.

Abstract

We report on the reversible, nonvolatile and polarity dependent resistive switching between superconductor and insulator states at the interfaces of a Au/YBa$_2$Cu$_3$O$_{7-\delta}$ (YBCO)/Au system. We show that the superconducting state of YBCO in regions near the electrodes can be reversibly removed and restored. The possible origin of the switching effect may be the migration of oxygen or metallic ions along the grain boundaries that control the intergrain superconducting coupling. Four-wire bulk resistance measurements reveal that the migration is not restricted to interfaces and produce significant bulk effects.