Line junction in a quantum Hall system with two filling fractions

TL;DR

This paper develops a microscopic model for quantum Hall line junctions with different filling factors, analyzing tunneling, interactions, and conductance behavior, which can be tested in recent experiments.

Contribution

It introduces a microscopic framework for line junctions with different filling factors, incorporating tunneling, interactions, and renormalization group analysis.

Findings

Conductance varies as a power law with temperature.

Line junction behavior depends on interaction strength.

Model aligns with recent experimental setups.

Abstract

We present a microscopic model for a line junction formed by counter or co-propagating single mode quantum Hall edges corresponding to different filling factors. The ends of the line junction can be described by two possible current splitting matrices which are dictated by the conditions of both lack of dissipation and the existence of a linear relation between the bosonic fields. Tunneling between the two edges of the line junction then leads to a microscopic understanding of a phenomenological description of line junctions introduced some time ago. The effect of density-density interactions between the two edges is considered, and renormalization group ideas are used to study how the tunneling parameter changes with the length scale. This leads to a power law variation of the conductance of the line junction with the temperature. Depending on the strength of the interactions the line junction can exhibit two quite different behaviors. Our results can be tested in bent quantum Hall systems fabricated recently.