Spin inversion devices with Fano anti-resonances

TL;DR

This paper proposes a theoretical design for a spin inversion device utilizing Fano anti-resonances in a quasi-2D electron gas, achieving up to 80% spin-inversion efficiency by exploiting magnetic field-induced band shifts and selection rules.

Contribution

It introduces a novel spin inversion device based on Fano anti-resonances, with a detailed analysis of spin transport and conditions for high efficiency.

Findings

Achieves up to 80% spin-inversion efficiency.

Identifies selection rules for resonant and antiresonant spin transmission.

Visualizes the mechanism through conductance and wave function analysis.

Abstract

Analyzing spin transport of quasi-2D electrons gas moving through a semiconductor wave guide subject to a sectionally homogeneous tilted magnetic field, we found well-defined selection rules for resonant and antiresonant spin carrier transmission. Based on these selection rules and the band shift induced by the magnetic field strength and the tilting angles, we propose an efficient spin inversion device. For a polarized incoming electron beam, we can determine from our theoretical approach, physical conditions for spin-inversion efficiency up to 80%. We visualize this mechanism in terms of conductance and the spacial behavior of the wave function amplitude along the superlattice.