Multiple Quantum Well AlGaAs Nanowires
C. Chen, N. Braidy, C. Couteau, C. Fradin, G. Weihs, R. LaPierre
TL;DR
This paper investigates the growth, structure, and luminescent properties of multiple quantum well AlGaAs nanowires, demonstrating enhanced light emission due to quantum confinement effects.
Contribution
It presents a novel method for fabricating MQW AlGaAs nanowires with controlled composition modulations and characterizes their improved luminescent properties.
Findings
Enhanced light emission in MQW NWs compared to non-segmented NWs
Successful growth of conical MQW structures via molecular beam epitaxy
Carrier confinement and sidewall passivation improve luminescence
Abstract
This letter reports on the growth, structure and luminescent properties of individual multiple quantum well (MQW) AlGaAs nanowires (NWs). The composition modulations (MQWs) are obtained by alternating the elemental flux of Al and Ga during the molecular beam epitaxy growth of the AlGaAs wire on GaAs (111)B substrates. Transmission electron microscopy and energy dispersive X-ray spectroscopy performed on individual NWs are consistent with a configuration composed of conical segments stacked along the NW axis. Micro-photoluminescence measurements and confocal microscopy showed enhanced light emission from the MQW NWs as compared to non-segmented NWs due to carrier confinement and sidewall passivation.
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