Vanishing Hall Coefficient in the Extreme Quantum Limit in Photocarrier-Doped SrTiO3

TL;DR

This study explores the extreme quantum limit in photocarrier-doped SrTiO3, revealing a vanishing Hall coefficient due to Landau level effects influenced by the material's unique electronic properties.

Contribution

It demonstrates the vanishing Hall coefficient in SrTiO3 at high magnetic fields, highlighting the role of Landau level occupancy and thermal effects in this quantum regime.

Findings

Hall coefficient vanishes at high magnetic fields

Saturation of magnetoresistance and Hall resistivity observed

Distinct behavior due to large effective mass and dielectric constant

Abstract

We have investigated the extreme quantum limit of photogenerated electrons in quantum paraelectric SrTiO3. This regime is distinct from conventional semiconductors, due to the large electron effective mass and large lattice dielectric constant. At low temperature, the magnetoresistance and Hall resistivity saturate at high magnetic field, deviating from conventional behavior. As a result, the Hall coefficient vanishes on the scale of the ratio of the Landau level splitting to the thermal energy, indicating the essential role of lowest Landau level occupancy, as limited by thermal broadening.