Dependence of far-field characteristics on the number of lasing modes in stadium-shaped InGaAsP microlasers
Muhan Choi, Susumu Shinohara, Takahisa Harayama
TL;DR
This paper investigates how the number of lasing modes in stadium-shaped InGaAsP microlasers influences their far-field emission patterns, showing improved correspondence with ray simulations as modes increase.
Contribution
It demonstrates the dependence of far-field emission characteristics on the number of lasing modes in stadium-shaped microlasers, supported by wave and ray simulation comparisons.
Findings
Far-field pattern correspondence improves with more lasing modes
Wave calculations reproduce the observed phenomena
Ray simulation results align better with experiments as modes increase
Abstract
We study spectral and far-field characteristics of lasing emission from stadium-shaped semiconductor (InGaAsP) microlasers. We demonstrate that the correspondence between a lasing far-field emission pattern and the result of a ray simulation becomes better as the number of lasing modes increases. This phenomenon is reproduced in the wave calculation of the cavity modes.
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