Perspective of spintronics applications based on the Extraordinary Hall Effect

TL;DR

The paper discusses the potential of the Extraordinary Hall Effect (EHE) in spintronics, highlighting its high sensitivity, stability, and suitability for magnetic sensors and memory devices due to its advantageous properties.

Contribution

It reviews the spin-dependent EHE phenomenon and its enhancements, emphasizing its promising applications in magnetic sensing and memory technology.

Findings

EHE-based devices exceed 1000 Ohm/T sensitivity

EHE offers linear response and thermal stability

Suitable for high-frequency, miniaturized applications

Abstract

Extraordinary Hall effect (EHE) is a spin-dependent phenomenon that generates voltage proportional to magnetization across a current carrying magnetic film. Magnitude of the effect can be artificially increased by stimulating properly selected spin-orbit scattering events. Already achieved sensitivity of the EHE-based sample devices exceeds 1000 Ohm/T, which surpasses the sensitivity of semiconducting Hall sensors. Linear field response, thermal stability, high frequency operation, sub-micron dimensions and, above all, simplicity, robustness and low cost manufacture are good reasons to consider a wide scale technological application of the phenomenon for magnetic sensors and memory devices.