Laterally defined freely suspended quantum dots in GaAs/AlGaAs heterostructures
C Rossler, M Bichler, D Schuh, W Wegscheider, S Ludwig
TL;DR
This paper explores the fabrication and electronic properties of freely suspended quantum dots in GaAs/AlGaAs heterostructures, demonstrating tunable localized states suitable for studying electron-phonon interactions.
Contribution
It introduces a method to create freely suspended quantum dots with tunable localized states in GaAs/AlGaAs heterostructures, enabling new investigations into electron-phonon interactions.
Findings
Successful fabrication of freely suspended nanostructures
Observation of tunable localized electron states
Potential for studying electron-phonon interactions
Abstract
Free standing beams containing a two-dimensional electron system are shaped from a GaAs/AlGaAs heterostructure. Quantum point contacts and (double) quantum dots are laterally defined using metal top gates. We investigate the electronic properties of these nanostructures by transport spectroscopy. Tunable localized electron states in freely suspended nanostructures are a promising tool to investigate the electron-phonon-interaction.
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