Temperature-dependence of the phase-coherence length in InN nanowires
Ch. Blomers, Th. Schapers, T. Richter, R. Calarco, H. Luth, and M., Marso
TL;DR
This study investigates how the phase-coherence length in InN nanowires varies with temperature using magnetotransport measurements, providing insights into quantum transport properties at low temperatures.
Contribution
The paper introduces a method to determine the temperature dependence of phase-coherence length in InN nanowires through conductance fluctuation analysis.
Findings
Phase-coherence length decreases with increasing temperature.
Conductance fluctuation patterns reveal quantum coherence effects.
Method enables precise characterization of quantum transport in nanowires.
Abstract
We report on low-temperature magnetotransport measurements on InN nanowires, grown by plasma-assisted molecular beam epitaxy. The characteristic fluctuation pattern observed in the conductance was employed to obtain information on phase-coherent transport. By analyzing the root-mean-square and the correlation field of the conductance fluctuations at various temperatures the phase-coherence length was determined.
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Taxonomy
TopicsGaN-based semiconductor devices and materials · Nanowire Synthesis and Applications · Acoustic Wave Resonator Technologies