Graphene Synthesis via the High Pressure - High Temperature Growth Process

TL;DR

This paper introduces a high pressure-high temperature method for synthesizing large-area, high-quality graphene using molten Fe-Ni catalysts, with detailed characterization confirming low defect density and potential for improved production reliability.

Contribution

The study presents a novel high pressure-high temperature process for graphene synthesis from natural graphite, demonstrating high-quality, large-area graphene with low defect density.

Findings

High-quality large-area graphene produced

Raman spectra confirm low defect density

Method enables reliable graphene synthesis

Abstract

We report on a new method for graphene synthesis and assessment of the properties of the resulting large-area graphene layers. Graphene was produced by the high pressure - high temperature growth from the natural graphitic source by utilizing the molten Fe-Ni catalysts for dissolution of carbon. The resulting large-area graphene flakes were transferred to the silicon - silicon oxide substrates for the spectroscopic micro-Raman and scanning electron microscopy inspection. The analysis of the G peak, D, T+D and 2D bands in the Raman spectra under the 488-nm laser excitation indicate that the high pressure - high temperature technique is capable of producing the high-quality large-area single-layer graphene with a low defect density. The proposed method may lead to a more reliable graphene synthesis and facilitate its purification and chemical doping.