Graphene Antidot Lattices - Designed Defects and Spin Qubits

TL;DR

This paper explores graphene antidot lattices with designed defects, demonstrating their potential to host spin qubits with favorable energy scales and analyzing their electronic properties and qubit interactions.

Contribution

It introduces the concept of using graphene antidot lattices with engineered defects as a platform for spin qubits, highlighting their advantageous energy scales and detailed electronic analysis.

Findings

Defect states in graphene antidot lattices can host electron spin qubits.

Exchange coupling between spin qubits can be calculated and optimized.

Graphene antidot lattices offer a promising platform for quantum information applications.

Abstract

Antidot lattices, defined on a two-dimensional electron gas at a semiconductor heterostructure, are a well-studied class of man-made structures with intriguing physical properties. We point out that a closely related system, graphene sheets with regularly spaced holes ("antidots"), should display similar phenomenology, but within a much more favorable energy scale, a consequence of the Dirac fermion nature of the states around the Fermi level. Further, by leaving out some of the holes one can create defect states, or pairs of coupled defect states, which can function as hosts for electron spin qubits. We present a detailed study of the energetics of periodic graphene antidot lattices, analyze the level structure of a single defect, calculate the exchange coupling between a pair of spin qubits, and identify possible avenues for further developments.