Phase-coherent transport in InN nanowires of various sizes
C. Blomers, Th. Schapers, T. Richter, R. Calarco, H. Luth, and M., Marso

TL;DR
This study explores phase-coherent electron transport in InN nanowires of different sizes, analyzing magneto-conductance fluctuations to understand how wire dimensions and magnetic field orientation affect quantum interference effects.
Contribution
It provides new insights into the size and orientation dependence of phase coherence and magneto-conductance fluctuations in InN nanowires, grown via plasma-assisted molecular beam epitaxy.
Findings
Correlation field depends on wire cross section for parallel magnetic fields.
Fluctuation amplitude is governed by wire length.
Phase coherence length limits correlation field for perpendicular fields in longer wires.
Abstract
We investigate phase-coherent transport in InN nanowires of various diameters and lengths. The nanowires were grown by means of plasma-assisted molecular beam epitaxy. Information on the phase-coherent transport is gained by analyzing the characteristic fluctuation pattern in the magneto-conductance. For a magnetic field oriented parallel to the wire axis we found that the correlation field mainly depends on the wire cross section, while the fluctuation amplitude is governed by the wire length. In contrast, if the magnetic field is oriented perpendicularly, for wires longer than approximately 200 nm the correlation field is limited by the phase coherence length. Further insight into the orientation dependence of the correlation field is gained by measuring the conductance fluctuations at various tilt angles of the magnetic field.
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Taxonomy
TopicsQuantum and electron transport phenomena · GaN-based semiconductor devices and materials · Advancements in Semiconductor Devices and Circuit Design
