Electronic Transport Properties of the Ising Quantum Hall Ferromagnet in a Si Quantum Well

TL;DR

This paper investigates the magnetotransport properties of high mobility Si 2D electron systems near Landau level crossing, revealing anisotropic resistance peaks, hysteresis due to Ising quantum Hall ferromagnetism, and characteristic current-voltage behavior.

Contribution

It provides experimental evidence of Ising quantum Hall ferromagnetism in Si quantum wells and analyzes the effects of pseudospin polarization on electron scattering.

Findings

Resistance peak shows strong anisotropy and hysteresis.

Peak splits into two in the paramagnetic regime.

Current-voltage characteristics display a wide voltage plateau.

Abstract

Magnetotransport properties are investigated for a high mobility Si two dimensional electron systems in the vicinity of a Landau level crossing point. At low temperatures, the resistance peak having a strong anisotropy shows large hysteresis which is attributed to Ising quantum Hall ferromagnetism. The peak is split into two peaks in the paramagnetic regime. A mean field calculation for the peak positions indicates that electron scattering is strong when the pseudospin is partially polarized. We also study the current-voltage characteristics which exhibit a wide voltage plateau.