Cross-correlations in transport through parallel quantum dots
Sebastian Haupt, Jasmin Aghassi, Matthias H. Hettler, Gerd Sch"on

TL;DR
This paper studies how current fluctuations in parallel quantum dots reveal detailed transport dynamics, showing different correlation patterns influenced by gate voltages and temperature, aligning with recent experimental observations.
Contribution
It provides a theoretical analysis of cross-correlations in quantum dot transport, highlighting their dependence on gate voltages and temperature, and connecting to experimental findings.
Findings
Cross-correlations depend qualitatively on gate voltages.
Temperature reduction changes correlation region shapes.
Experimental shapes are explained by the model.
Abstract
We investigate cross-correlations in the tunneling currents through two parallel quantum dots coupled to independent electrodes and gates and interacting via an inter-dot Coulomb interaction. The correlations reveal additional information, beyond what can be learned from the current or conductance, about the dynamics of transport processes of the system. We find qualitatively different scenarios for the dependence of the cross-correlations on the two gate voltages. Reducing the temperature below the inter-dot Coulomb interaction, regions of a given sign change from spherical shapes to angular L-shapes or stripes. Similar shapes have been observed in recent experiments.
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Taxonomy
TopicsQuantum and electron transport phenomena · Molecular Junctions and Nanostructures · Surface and Thin Film Phenomena
