Analysis of the exciton-exciton interaction in semiconductor quantum wells

TL;DR

This paper investigates exciton-exciton interactions in semiconductor quantum wells using advanced theoretical models, providing insights into biexciton formation and exciton density relations crucial for Bose-Einstein condensation research.

Contribution

It introduces a comprehensive bosonization scheme with full spin structure and improves interaction potential calculations by including van der Waals effects, advancing understanding of exciton interactions.

Findings

Enhanced models for exciton interactions including van der Waals effects.

Calculated biexciton formation in bilayer systems.

Derived a modified exciton density-blue shift relation.

Abstract

The exciton-exciton interaction is investigated for quasi-two-dimensional quantum structures. A bosonization scheme is applied including the full spin structure. For generating the effective interaction potentials, the Hartree-Fock and Heitler-London approaches are improved by a full two-exciton calculation which includes the van der Waals effect. With these potentials the biexciton formation in bilayer systems is investigated. For coupled quantum wells the two-body scattering matrix is calculated and employed to give a modified relation between exciton density and blue shift. Such a relation is of central importance for gauging exciton densities in experiments which pave the way toward Bose-Einstein condensation of excitons.