Tuneable Capacitor based on dual picks profile of the sacrificial layer
S. Soulimane (LETI), F. Casset (LETI), F. Chapuis (LETI), P.-L., Charvet (LETI), M. a\"id (LETI)

TL;DR
This paper introduces a novel dual gap tunable capacitor process utilizing a specially designed sacrificial layer profile created through a tri-layer photo-resist process with a single mask, influenced by various fabrication parameters.
Contribution
It presents a new dual pick profile fabrication method for tunable capacitors using a simplified tri-layer photo-resist process with one mask level.
Findings
Successful realization of a dual pick profile in the sacrificial layer.
Demonstration of the influence of fabrication parameters on the profile.
Discussion of the process mechanisms and parameter effects.
Abstract
In this paper, we present a novel dual gap tuneable capacitor process based on the profile of the sacrificial layer. This profile involves a tri-layer photo-resist process with only one mask level. This realization is based on a special profile of the sacrificial layer designed by two picks. The mechanism of the sacrificial layer realisation is dependent on resist thickness, resist formulation (viscosity, type of polymer and/or solvent, additives...), design of the patterned layer (size or width) and the conditions under which this layer is prepared: thermal treatment, etch back processes... In this communication we demonstrate influence of the later parameters and discuss how a dual pick profile was achieved.
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Taxonomy
TopicsAdvanced MEMS and NEMS Technologies · 3D IC and TSV technologies · Electrowetting and Microfluidic Technologies
