A Fully Parameterized Fem Model for Electromagnetic Optimization of an RF Mems Wafer Level Package

TL;DR

This paper introduces a fully parameterized electromagnetic model for RF MEMS wafer level packages, enabling optimization of losses and mismatches, validated through simulations and experimental testing.

Contribution

It presents a novel fully parameterized FEM model for RF MEMS packages that allows comprehensive optimization of fabrication degrees of freedom.

Findings

Model accurately predicts electromagnetic behavior of RF MEMS packages

Validation shows good agreement between simulations and experimental data

Optimization potential for reducing losses and mismatches in RF MEMS

Abstract

In this work, we present a fully parameterized capped transmission line model for electromagnetic optimization of a wafer level package (WLP) for RF MEMS applications using the Ansoft HFSS-TM electromagnetic simulator. All the degrees of freedom (DoF's) in the package fabrication can be modified within the model in order to optimize for losses and mismatch (capacitive and inductive couplings) introduced by the cap affecting the MEMS RF behaviour. Ansoft HFSS-TM was also validated for the simulation of capped RF MEMS devices by comparison against experimental data. A test run of capped 50 transmission lines and shorts was fabricated and tested.