Gold nanoparticle-pentacene memory-transistors

TL;DR

This paper presents a novel organic memory-transistor using pentacene and gold nanoparticles, achieving significant threshold voltage shifts, high on/off ratios, and good charge retention, advancing organic memory device technology.

Contribution

It introduces a new organic memory-transistor with gold nanoparticles immobilized on the gate dielectric, demonstrating enhanced memory effects and charge retention.

Findings

Threshold voltage shift of 22 V

On/off drain current ratio of approximately 30,000

Charge retention time up to 4500 seconds

Abstract

We demonstrate an organic memory-transistor device based on a pentacene-gold nanoparticles active layer. Gold (Au) nanoparticles are immobilized on the gate dielectric (silicon dioxide) of a pentacene transistor by an amino-terminated self-assembled monolayer. Under the application of writing and erasing pulses on the gate, large threshold voltage shift (22 V) and on/off drain current ratio of ~3E4 are obtained. The hole field-effect mobility of the transistor is similar in the on and off states (less than a factor 2). Charge retention times up to 4500 s are observed. The memory effect is mainly attributed to the Au nanoparticles.