Robust strongly-modulated transmission of a $T$-shaped structure with local Rashba interaction

TL;DR

This paper introduces a spin transistor design based on a T-shaped structure with local Rashba interaction, demonstrating robust antiresonance energy gaps that can be controlled via gate voltage, promising for practical spintronic devices.

Contribution

It presents a novel T-shaped spin transistor scheme utilizing local Rashba interaction to achieve controllable and robust antiresonance energy gaps for spin transport.

Findings

Antiresonance energy gap caused by Fano-Rashba and structure interference.

Large current achievable by tuning Rashba strength and sidearm length.

Robustness of the antiresonance gap against strong disorder.

Abstract

We propose a scheme of spin transistor using a $T$-shaped structure with local Rashba interaction. A wide antiresonance energy gap appears due to the interplay of two types of interference, the Fano-Rashba interference and the structure interference. A large current from the gap area can be obtained via changing the Rashba strength and/or the length of the sidearm by using gate voltage. The robustness of the antiresonance gap against strong disorder is demonstrated and shows the feasibility of this structure for the real application.