Nanoscale field effect transistor for biomolecular signal amplification
Yu Chen, Xihua Wang, Mi K. Hong, Shyamsunder Erramilli, Carol, Rosenberg, Pritiraj Mohanty

TL;DR
This paper introduces a nanoscale silicon FET device that amplifies biomolecular signals by detecting surface potential changes, with narrower channels providing higher sensitivity and operation in negative bias enhancing signal amplification.
Contribution
The study presents a novel nanoscale silicon FET device for biomolecular detection that achieves signal amplification through operation in the negative source-drain bias region.
Findings
Narrower channels increase sensitivity due to higher surface-to-volume ratio.
Device operation in negative bias region amplifies biomolecular signals.
Differential conductance measurement enables sensitive detection of surface potential changes.
Abstract
We report amplification of biomolecular recognition signal in lithographically defined silicon nanochannel devices. The devices are configured as field effect transistors (FET) in the reversed source-drain bias region. The measurement of the differential conductance of the nanowire channels in the FET allows sensitive detection of changes in the surface potential due to biomolecular binding. Narrower silicon channels demonstrate higher sensitivity to binding due to increased surface-to-volume ratio. The operation of the device in the negative source-drain region demonstrates signal amplification. The equivalence between protein binding and change in the surface potential is described.
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