Tunneling conductance of a metal-semiconductor heterostructure with Rashba effect

TL;DR

This paper theoretically investigates the tunneling conductance in a metal-semiconductor heterostructure with Rashba spin-orbit coupling, revealing how interface scattering influences conductance and spin polarization, and proposing a method to measure Rashba energy.

Contribution

It introduces a theoretical framework to analyze tunneling spectroscopy in Rashba systems and shows how interface scattering affects conductance and spin polarization.

Findings

Energy spacing in conductance spectrum measures Rashba energy.

Increased interface scattering can enhance conductance.

Spin-flip scattering influences conductance and spin polarization.

Abstract

We theoretically studied the in-plane tunneling spectroscopy of the hybrid structure composed of a metal and a semiconductor with Rashba spin-orbit coupling. We found that the energy spacing between two distinct features in the conductance spectrum can be used to measure the Rashba energy of the semiconductor. We also considered the effect that varying the probability of spin-conserving and spin-flip scattering at the interface has on the overall conductance. Surprisingly, an increase in interface scattering probability can actually result in increased conductance under certain conditions. Particularly, in the tunneling regime, an increase in spin-flip scattering probability enhances the conductance. It is also found that the interfacial scattering greatly affects the spin polarization of the conductance in metal, but hardly affects that in the semiconductor.