Voltage and Temperature Dependence of High-Field Magnetoresistance in Arrays of Magnetic Nanoparticles

TL;DR

This paper investigates the voltage and temperature dependence of high-field magnetoresistance in arrays of magnetic nanoparticles, proposing a model involving paramagnetic impurities to explain experimental observations of large, voltage-dependent magnetoresistance.

Contribution

The study introduces a model accounting for paramagnetic impurities and their influence on magnetotransport, explaining the exponential decrease and scaling behavior of magnetoresistance in nanoparticle arrays.

Findings

Reproduces large magnetoresistance magnitude with realistic parameters

Explains exponential decrease of magnetoresistance with voltage

Describes scaling of magnetoresistance with field-temperature ratio

Abstract

Huge values of high field magnetoresistance have been recently reported in large arrays of CoFe nanoparticles embedded in an organic insulating lattice in the Coulomb blockade regime. An unusual exponential decrease of magnetoresistance with increasing voltage was observed, as well as a characteristic scaling of the magnetoresistance amplitude versus the field-temperature ratio. We propose a model which takes into account the influence of paramagnetic impurities on the transport properties of the system to describe these features. It is assumed that the non-colinearity between the core spins inside the nanoparticles and the paramagnetic impurities can be modelled by an effective tunnel barrier, the height of which depends on the relative angle between the magnetization of both kind of spins. The influence on the magnetotransport properties of the height and the thickness of the effective tunnel barrier of the magnetic moment of the impurity, as well as the bias voltage are studied. This model allows us to reproduce the large magnetoresistance magnitude observed and its strong voltage dependence, with realistic parameters.