On the calculation of Schottky contact resistivity
Yang Liu

TL;DR
This paper emphasizes the importance of self-consistent modeling of transport and electrostatics in accurately calculating Schottky contact resistivity, proposing an explicit numerical method to enhance calculation efficiency.
Contribution
It introduces a self-consistent approach and an explicit numerical method for more accurate and efficient Schottky contact resistivity calculations.
Findings
Ignoring self-consistency underestimates resistivity
Self-consistent modeling significantly improves accuracy
Proposed method enhances computational efficiency
Abstract
This numerical study examines the importance of self-consistently accounting for transport and electrostatics in the calculaiton of semiconductor/metal Schottky contact resistivity. It is shown that ignoring such self-consistency results in significant under-estimation of the contact resistivity. An explicit numerical method has also been proposed to efficiently improve contact resistivity calculations.
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Taxonomy
TopicsSemiconductor materials and interfaces · Surface and Thin Film Phenomena · Force Microscopy Techniques and Applications
