Parametrization of C-shocks. Evolution of the Sputtering of Grains
I. Jimenez-Serra (1,2), P. Caselli (2,3), J. Martin-Pintado (1), T., W. Hartquist (2) ((1) DAMIR-IEM-CSIC, Spain, (2) University of Leeds, UK, (3), INAF-Osservatorio Astrofisico di Arcetri, Italy)

TL;DR
This paper models the evolution of grain sputtering in C-shocks to explain observed SiO enhancements, emphasizing the role of CO in low-velocity shocks and matching recent astrophysical observations.
Contribution
It introduces a parametric model for C-shock evolution that accounts for sputtering yields, explaining SiO abundance increases observed in young shocks.
Findings
CO is the most efficient sputtering agent in low velocity shocks.
Sputtering by CO can produce SiO abundances of 10E-11 at early shock stages.
The model reproduces the observed enhancement of SiO, CH3OH, and H2O in the L1448-mm outflow.
Abstract
Context: The detection of narrow SiO lines toward the young shocks of the L1448-mm outflow has been interpreted as a signature of the magnetic precursor of C-shocks. In contrast with the low SiO abundances (<10E-12) in the ambient gas, the narrow SiO emission at almost ambient velocities reveals enhanced SiO abundances of 10E-11. This enhancement has been proposed to be produced by the sputtering of the grain mantles at the first stages of C-shocks. However, modelling of the sputtering of grains has usually averaged the SiO abundances over the dissipation region of C-shocks, which cannot explain the recent observations. Aims: To model the evolution of the gas phase abundances of SiO, CH3OH and H2O, produced by the sputtering of grains as the shock propagates through the ambient gas. Methods: We propose a parametric model to describe the physical structure of C-shocks as a function of…
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