Zero-field spin-splitting and spin lifetime in n-InSb/In1-xAlxSb asymmetric quantum well heterostructures
A. M. Gilbertson, M. Fearn, J. H. Jefferson, B. N. Murdin, P. D., Buckle, L. F. Cohen

TL;DR
This study calculates spin-orbit coupling parameters and spin lifetimes in n-InSb/In1-xAlxSb quantum wells, revealing significant BIA contributions and their impact on spin relaxation, with implications for spintronic device performance.
Contribution
It provides the first detailed calculation of both SIA and BIA spin-orbit parameters and their effect on spin lifetime in InSb/In1-xAlxSb quantum wells, highlighting the importance of BIA in these structures.
Findings
BIA and SIA parameters scale linearly with carrier density.
BIA contribution is comparable to SIA in these quantum wells.
Maximum spin lifetime occurs in narrow wells at moderate densities.
Abstract
The spin-orbit (SO) coupling parameters for lowest conduction subband due to structural (SIA) and bulk (BIA) inversion asymmetry are calculated for a range of carrier densities in [001]-grown delta-doped n-type InSb/In1-xAlxSb asymmetric quantum wells using the established 8 band k.p formalism [PRB 59,8 R5312 (1999)]. We present calculations for conditions of zero bias at 10 K. It is shown that both the SIA and BIA parameters scale approximately linearly with carrier density, and exhibit a marked dependence on well width when alloy composition is adjusted to allow maximum upper barrier height for a given well width. In contrast to other material systems the BIA contribution to spin splitting is found to be of significant and comparable value to the SIA mechanism in these structures. We calculate the spin lifetime for spins oriented along [11-0] based on D'yakonov-Perel mechanism using…
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