Ground State Energy of Current Carriers in Graphene
P. V. Ratnikov, A. P. Silin (Lebedev Physics Institute)

TL;DR
This paper calculates the ground state energy of charge carriers in graphene, analyzes the stability of its electronic system, and discusses potential phase transitions between zero-gap semiconductor and semimetal states.
Contribution
It provides a theoretical calculation of the ground state energy in graphene and explores conditions for phase transitions, which advances understanding of graphene's electronic properties.
Findings
Calculated ground state energy of carriers in graphene.
Derived stability conditions for the electronic system.
Discussed the possibility of a semiconductor-semimetal transition.
Abstract
The ground state energy of current carriers in graphene considered as a zero-gap semiconductor was calculated in the two-band approximation. The condition of the electronic (hole) system stability in graphene was obtained. The possibility of the zero-gap semiconductor-semimetal transition was discussed.
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Taxonomy
TopicsGraphene research and applications · Carbon Nanotubes in Composites · Semiconductor materials and interfaces
