Magnetically induced spin-dependent photoemission from p-GaAs(Cs,O) into vacuum

TL;DR

This paper reports the experimental observation of spin-dependent photoemission from p-GaAs(Cs,O) into vacuum under a magnetic field, explained by a model involving the electron g factor jump at the interface, with applications in measuring spin diffusion length.

Contribution

The study demonstrates a novel spin-dependent photoemission effect caused by the g factor jump at the semiconductor-vacuum interface, providing a new method to determine spin diffusion length.

Findings

Spin-dependent photoemission observed experimentally.

Effect explained by electron g factor jump model.

Potential application in measuring spin diffusion length.

Abstract

A spin-dependent emission of optically oriented electrons from p-GaAs(Cs,O) into vacuum was experimentally observed in a magnetic field normal to the surface. This phenomenon is explained within the model which takes into account the jump in the electron g factor at the semiconductor-vacuum interface. Due to this jump, the effective electron affinity on the semiconductor surface depends on the mutual direction of optically oriented electron spins and the magnetic field, resulting in the spin-dependent photoemission. It is demonstrated that the observed effect can be used for the determination of spin diffusion length in semiconductors.