Hybridization between the conduction band and 3d orbitals in the oxide-based diluted magnetic semiconductor In$_{2-x}$V$_x$O$_3$

TL;DR

This study investigates the electronic structure of V-doped In₂O₃ using spectroscopic techniques, revealing hybridization between the conduction band and V 3d orbitals, which is crucial for understanding its magnetic properties.

Contribution

The paper provides direct spectroscopic evidence of hybridization between the conduction band and V 3d orbitals in In₂O₃, advancing understanding of its electronic structure.

Findings

V ions are in a trivalent state in In₂O₃

Hybridization between In conduction band and V 3d orbitals confirmed

Spectroscopic differences observed between V-doped and pure In₂O₃

Abstract

The electronic structure of In$_{2-x}$V$_x$O$_3$ ($x=0.08$) has been investigated using photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). The V $2p$ core-level PES and XAS spectra revealed trivalent electronic state of the V ion, consistent with the substitution of the V ion for the In site. The V 3d partial density of states obtained by the resonant PES technique showed a sharp peak above the O $2p$ band. While the O $1s$ XAS spectrum of In$_{2-x}$V$_x$O$_3$ was similar to that of In$_2$O$_3$, there were differences in the In $3p$ and 3d XAS spectra between V-doped and pure In$_2$O$_3$. The observations give clear evidence for hybridization between the In conduction band and the V 3d orbitals in In$_{2-x}$V$_x$O$_3$.