Precise half-life measurement of the 26Si ground state
I. Matea, J. Souin, J. Aysto, B. Blank, P. Delahaye, V.-V. Elomaa, T., Eronen, J. Giovinazzo, U. Hager, J. Hakala, J. Huikari, A. Jokinen, A., Kankainen, I.D. Moore, J.-L. Pedroza, S. Rahaman, J. Rissanen, J. Ronkainen,, A. Saastamoinen, T. Sonoda, and C. Weber
TL;DR
This paper reports a highly precise measurement of the 26Si ground state half-life, improving the accuracy fourfold, and also measures related branching ratios using advanced separation techniques.
Contribution
The study provides the most precise half-life measurement of 26Si to date and includes new measurements of super-allowed branching ratios using the IGISOL and JYFLTRAP facilities.
Findings
Half-life of 26Si measured as 2.2283(27) seconds
Improved precision by a factor of 4 over previous data
Measured super-allowed branching ratios with similar accuracy
Abstract
The beta-decay half-life of 26Si was measured with a relative precision of 1.4*10e3. The measurement yields a value of 2.2283(27) s which is in good agreement with previous measurements but has a precision that is better by a factor of 4. In the same experiment, we have also measured the non-analogue branching ratios and could determine the super-allowed one with a precision similar to the previously reported measurements. The experiment was done at the Accelerator Laboratory of the University of Jyvaskyla where we used the IGISOL technique with the JYFLTRAP facility to separate pure samples of 26Si.
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