Magnetoelectric Control of Domain Walls in a Ferrite Garnet Film

TL;DR

This paper demonstrates electric field-induced displacement of magnetic domain walls in ferrite garnet films, highlighting an inhomogeneous magnetoelectric interaction as the underlying mechanism.

Contribution

It reports the first observation of electric field control of domain walls in ferrite garnet films and proposes a possible magnetoelectric interaction mechanism.

Findings

Electric fields induce domain wall displacement in ferrite garnet films.

The effect depends on electric field polarity and is independent of magnetization direction.

Inhomogeneous magnetoelectric interaction is proposed as the mechanism.

Abstract

The effect of magnetic domain boundaries displacement induced by electric field is observed in epitaxial ferrite garnet films (on substrates with the (210) crystallographic orientation). The effect is odd with respect to the electric field (the direction of wall displacement changes with the polarity of the voltage) and even with respect to the magnetization in domains. The inhomogeneous magnetoelectric interaction as a possible mechanism of the effect is proposed.