Ferromagnet proximity effects and magnetoresistance of bilayer graphene

TL;DR

This paper predicts that placing bilayer graphene between ferromagnetic insulators can significantly alter its electronic properties and induce a large magnetoresistive effect, especially with antiparallel magnetization alignment.

Contribution

It introduces a theoretical model showing how ferromagnetic proximity effects modify bilayer graphene's band structure and magnetoresistance based on magnetization orientation.

Findings

Energy gap depends on magnetization angle

Resistive change can reach tens of percent at room temperature

Effect increases at lower temperatures

Abstract

A drastic modification of electronic band structure is predicted in bilayer graphene when it is placed between two ferromagnetic insulators. Due to the exchange interaction with the proximate ferromagnet, the electronic energy dispersion in the graphene channel strongly depends on the magnetization orientation of two ferromagnetic layers, $\mathbf{M_{1}}$ and $\mathbf{M_{2}} $. While the parallel configuration $\mathbf{M_{1}}= \mathbf{M_{2}}$ leads to simple spin splitting of both conduction and valence bands, an energy gap is induced as soon as the angle $\theta$ between $\mathbf{M_{1}}$ and $% \mathbf{M_{2}}$ becomes non-zero with the maximum achieved at $\theta=\pi$ (i.e., antiparallel alignment). Consequently, bilayer graphene may exhibit a sizable magnetoresistive effect in the current-in-plane configuration. A rough estimate suggests the resistance changes on the order of tens of percent at room temperature. This effect is expected to become more pronounced as the temperatures decreases.